Semiconductor processing methods of forming integrated circuitry, and methods of forming dynamic random access memory circuitry

ABSTRACT

Semiconductor processing methods are described which can be used to reduce the chances of an inadvertent contamination during processing. In one implementation, a semiconductor wafer backside is mechanically scrubbed to remove an undesired material prior to forming a final passivation layer over an oppositely facing semiconductor wafer frontside. In another implementation, the wafer backside is treated to remove the undesired material while treatment of the wafer frontside is restricted. In another implementation, the mechanical scrubbing of the wafer backside is conducted in connection with a polishing solution which is effective to facilitate removal of undesired material from the wafer backside. In a preferred implementation, dynamic random access memory storage capacitors are formed and the undesired material constitutes remnant polysilicon which adheres to the wafer backside during formation of a frontside capacitor storage node. In accordance with this implementation, the wafer backside is mechanically scrubbed prior to formation of a storage capacitor dielectric layer, with such mechanical scrubbing taking place in connection with a polishing solution comprising tetramethyl ammonium hydroxide (TMAH) having a desired concentration.

RELATED APPLICATION DATA

This application is a continuation of U.S. patent application Ser. No.08/968,083, filed on Nov. 12, 1997, now abandoned entitled“Semiconductor Processing Methods Of Forming Integrated Circuitry, AndMethods Of Forming Dynamic Random Access Memory Circuitry” listingMichael T. Andreas as the inventor.

TECHNICAL FIELD

This invention relates to semiconductor processing methods, and moreparticularly it concerns removing undesired material from asemiconductor wafer backside to reduce a risk of inadvertentcontamination. The invention also concerns methods of forming integratedcircuitry, and in particular methods of forming dynamic random accessmemory storage capacitors.

BACKGROUND OF THE INVENTION

Semiconductor processing includes deposition of different materials overa semiconductor wafer. Such materials are typically deposited on a waferwhich is placed within a reactor, such as a chemical vapor depositionreactor. During deposition, the material being deposited typicallydeposits over the entire wafer, including the wafer backside, and on theinterior walls of the deposition reactor and the equipment used tosupport the wafer during processing. Material deposited on the waferbackside is problematic because it can become dislodged duringdownstream processing and contaminate the frontside of the wafer.

This invention arose out of concerns associated with improving themanner in which semiconductor wafers are processed. This invention alsoarose out of concerns associated with reducing the chances ofinadvertent contamination during semiconductor wafer processing.

SUMMARY OF THE INVENTION

Semiconductor processing methods are described which can be used toreduce the chances of an inadvertent contamination during processing. Inone implementation, a semiconductor wafer backside is mechanicallyscrubbed to remove an undesired material prior to forming a finalpassivation layer over an oppositely facing semiconductor waferfrontside. In another implementation, the wafer backside is treated toremove the undesired material while treatment of the wafer frontside isrestricted. In another implementation, the mechanical scrubbing of thewafer backside is conducted in connection with a polishing solutionwhich is effective to facilitate removal of undesired material from thewafer backside. In a preferred implementation, dynamic random accessmemory storage capacitors are formed and the undesired materialconstitutes remnant polysilicon which adheres to the wafer backsideduring formation of a frontside capacitor storage node. In accordancewith this implementation, the wafer backside is mechanically scrubbedprior to formation of a storage capacitor dielectric layer, with suchmechanical scrubbing taking place in connection with a polishingsolution comprising tetramethyl ammonium hydroxide (TMAH) having adesired concentration.

BRIEF DESCRIPTION OF THE DRAWINGS

Preferred embodiments of the invention are described below withreference to the following accompanying drawings.

FIG. 1 is a flow diagram illustrating certain methodical aspects of thepresent invention.

FIG. 2 is a diagrammatic sectional view of a semiconductor waferfragment undergoing processing in accordance with the invention.

FIG. 3 is a view of the FIG. 2 wafer fragment at a processing stepsubsequent to that shown by FIG. 2.

FIG. 4 is a view of the FIG. 2 wafer fragment at a processing stepsubsequent to that shown by FIG. 3.

FIG. 5 is a view of the FIG. 2 wafer fragment at a processing stepsubsequent to that shown by FIG. 4.

FIG. 6 is a diagrammatic sectional view of a semiconductor waferfragment undergoing processing in accordance with a preferred embodimentof the present invention.

FIG. 7 is a view of the FIG. 6 wafer fragment at a processing stepsubsequent to that shown by FIG. 6.

FIG. 8 is a view of the FIG. 6 wafer fragment at a processing stepsubsequent to that shown by FIG. 7.

FIG. 9 is a view of the FIG. 6 wafer fragment at a processing stepsubsequent to that shown by FIG. 8.

FIG. 10 is a view of the FIG. 6 wafer fragment at a processing stepsubsequent to that shown by FIG. 9.

FIG. 11 is a view of the FIG. 6 wafer fragment at a processing stepsubsequent to that shown by FIG. 10.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

This disclosure of the invention is submitted in furtherance of theconstitutional purposes of the U.S. Patent Laws “to promote the progressof science and useful arts” (Article 1, Section 8).

Referring to FIGS. 1-5, certain methodical aspects of the invention areset forth in a flow diagram (FIG. 1), and an exemplary illustrativeimplementation follows the flow diagram in FIGS. 2-5.

Referring to FIGS. 1 and 2, a fragmentary semiconductor wafer 10 (FIG.2) is provided at step 110 (FIG. 1). Wafer 10 includes a wafer frontside12 and a wafer backside 14. Wafer backside 14 faces generally oppositelyaway from wafer frontside 12.

Referring to FIGS. 1 and 3, wafer 10, and in particular wafer frontside12 is subjected to processing conditions which cause an undesiredmaterial 18 to adhere or form on at least some of wafer backside 14.Such processing constitutes, at step 112, at least partially formingintegrated circuitry 16 relative to wafer frontside 12.

Referring to FIGS. 1 and 4, and at step 114, wafer backside 14 istreated to remove at least some, and preferably all of the undesiredmaterial 18. In a preferred implementation, wafer backside 14 is treatedwhile wafer frontside 12 is not appreciably treated. Accordingly,treatment of wafer frontside 12 is substantially restricted as willbecome apparent below. In accordance with one aspect of the invention,the treatment of wafer backside 14 comprises mechanically scrubbing thewafer backside. In accordance with another aspect of the invention, thetreatment comprises chemically treating wafer backside 14 with asolution which is effective to facilitate removal of the undesiredmaterial. In another aspect, wafer backside 14 can be chemically treatedprior to mechanically scrubbing the backside. In a most preferredaspect, the treatment of wafer backside 14 constitutes mechanicallyscrubbing the wafer backside and chemically treating the wafer backsidein the same step or at the same time. Accordingly, in this aspect of theinvention, the wafer backside is treated with a solution during themechanical scrubbing thereof which also imparts a degree of removal bychemical means.

In one implementation, the undesired material 18 constitutes remnantpolysilicon material which forms over backside 14 during semiconductorwafer processing. Typically, such is the case because of a desiredfrontside deposition of polysilicon. In accordance with one aspect ofthis implementation, the mechanical scrubbing of the wafer backside cancomprise using an aqueous polishing solution having at least about 1% byweight tetramethyl ammonium hydroxide (TMAH) during the scrubbing. Inaccordance with another aspect of this implementation, the mechanicalscrubbing comprises using a polishing solution having less than or equalto about 5% by weight TMAH. Alternately, the solution can comprise anaqueous solution of about 4% by weight TMAH.

According to yet another aspect of this implementation, the waferbackside 14 is treated with a solution having at least about 1% byweight TMAH prior to the mechanical scrubbing thereof. Accordingly, sucha solution is effective to chemically etch the undesired polysiliconmaterial. Exposure times for such solution can be more or less thanabout one minute depending on the strength of the polishing solution.For example, utilizing an aqueous solution of about 5% by weight TMAHfor the backside scrub, an exposure time of about one minute should beadequate to effectuate removal of the remnant polysilicon. Of course,exposure times can vary. Additionally, other solutions can be utilizedsuch as various HF-based solutions with exemplary solutions beingutilized in connection with a hood, spin-etch, or scrub.

Referring to FIGS. 1 and 5, a final passivation layer 20 is formed overwafer frontside 12 at step 116. Typically, such passivation layer isprovided after a final metallization layer is patterned. Accordingly,such constitutes forming a final passivation layer over the waferfrontside after scrubbing (either mechanically, chemically, or both) theundesired material from wafer backside 14. After forming finalpassivation layer 20, the wafer backside 14 can again be mechanicallyscrubbed to remove any undesired material thereover.

The discussion now proceeds with respect to FIGS. 6-11 which illustratea preferred implementation of the above-described invention.

Referring to FIG. 6, a fragmentary portion of a semiconductor wafer isindicated generally at 22 and includes a substrate 24. Fragment 22includes a wafer frontside 26 and a wafer backside 28. Conductive lines30, 32 are provided over substrate 24, as are source/drain diffusionregions 31, 33, all of which constitute portions of dynamic randomaccess memory (DRAM) circuitry as will become apparent below.

Referring to FIG. 7, a layer 34 of insulative material is formed overwafer frontside 26. An exemplary material is borophosphosilicate glass(BPSG).

Referring to FIG. 8, a capacitor container opening 36 is etched into andthrough insulative layer 34 to expose diffusion region 31. A layer 38 ofstorage node material is formed over frontside 26 and within capacitorcontainer opening 36. Exemplary materials for layer 38 includeconductively doped polysilicon or so-called rugged-type polysilicon(hemispherical grain or cylindrical grain polysilicon). The storage nodematerial less than fills the capacitor contact opening. A fillermaterial 40 (i.e. photoresist) can be, and preferably is formed over atleast portions of the wafer and to a degree which is sufficient to fillthe remaining capacitor container opening 36 as shown. Such protects thecapacitor container opening from debris which can be generated duringsubsequent processing. Formation of the above-described storage nodematerial layer 38 also tends to cause remnant polysilicon material 38′to be formed over the wafer backside 28. Such is undesirable, assubsequent processing can cause material 38′ to be removed andundesirably partially deposit on wafer frontside 26. This can possiblyruin the integrated circuitry formed thereover.

Referring to FIG. 9, filler material 40 and layer 38 are planarizedrelative to insulative layer 34 to isolate storage node material 42within capacitor container opening 36 as shown. An exemplaryplanarization of such layers comprises a suitable chemical-mechanicalpolishing thereof. Such effectively provides a first capacitor plate ofa DRAM storage capacitor. Storage node material 42 can be recessedwithin the capacitor container opening as shown, through a short wetrecess step. An exemplary wet recess comprises submerging the wafer in a1% by weight TMAH solution for about 5 minutes. Such a recess etchremoves residual surface polysilicon left over from the aforementionedchemical mechanical process and provides assurance that any conductivematerial redeposited later atop layer 34 does not cause undesiredshorting between storage nodes.

Referring to FIG. 10, semiconductor wafer backside 28 is subjected toconditions which are effective to remove at least some, and preferablyall, of the undesirable material 38′ which may have adhered theretoduring prior processing. Preferably, the removal of material 38′ takesplace prior to forming a capacitor dielectric material over firstcapacitor plate 42. In accordance with a preferred aspect of theinvention, treatment of the wafer frontside 26 is restricted during suchprocessing so that only the backside 28 is meaningfully treated. Afterthe FIG. 9 chemical-mechanical polishing which isolates storage nodematerial 42, wafer backside 28 is mechanically scrubbed by a scrubber 44to remove undesired storage node material 38′ which may have accumulatedthereover. The scrubbing action of scrubber 44, which is most preferablyrotational, effectively dislodges the undesired material, with gravityserving to allow such dislodged material to drop away from the wafer. Inaccordance with another preferred aspect of the invention, themechanical scrubbing of wafer backside 28 is conducted in conjunctionwith a polishing solution (represented by dispenser 46) which comprisesat least about 1% by weight TMAH. Even more preferably, the polishingsolution has less than or equal to about 5% by weight TMAH. Greaterconcentrations are of course possible, such as about 10% or 20% byweight TMAH. Chemical treatment of the wafer backside 28 with TMAH cantake place either prior to, during, or after the mechanical scrubbingthereof. Preferably such takes place before as well as during themechanical scrubbing.

An exemplary and preferred processing apparatus for implementing theabove-described scrubbing and treatment is available from DNSElectronics, Sunnyvale, California, as Dainippon Screen Cleaner, ModelNumber AS-2000. The preferred apparatus enables the wafer backside to beprocessed as described above, while substantially, if not completely,restricting frontside exposure to any of the backside polishingchemistry or processing contaminants mentioned above. The AS-2000includes rotating backside brushes which, in conjunction with a rotatingwafer and the preferred polishing solution, can effectively removeundesired material from the backside. The centrifugal force of the waferin connection with the influence of gravity serve to direct debrisdownwardly and away from the wafer. Such constitutes an exemplarytreatment or processing of the wafer in which the wafer frontside is notappreciably treated. Accordingly, treatment of the wafer frontside isrestricted. Although the AS-2000 processing apparatus is preferred,other processing apparatuses can, of course, be used, e.g., an SSECEvergreen 200 double-sided wafer cleaner, available from Solid StateEquipment Corp., Fort Washington, Penn.

After treatment of the wafer backside as just described, frontside 26can be scrubbed or otherwise treated with a 0.06% by weight TMAHtreatment. Thereafter wafer 22 is subjected to further processing.

Referring to FIG. 11, and following removal of filler material 40 fromcapacitor container opening 36, a layer 48 of dielectric material isformed over storage node material 42. Subsequently, a cell plate layeror second capacitor plate 50 is formed over dielectric layer 48.Subsequent processing includes patterning and etching the cell plate anddielectric layers to define individual discrete DRAM storage capacitors.Subsequently, after bit line contact formation and other relatedprocessing, a final passivation layer 52 is formed over wafer frontside26. Following formation of the final passivation layer, wafer backside28 can be mechanically scrubbed again to ensure removal of anyadditional undesired material.

The above-described methodology enables potential contaminants to beremoved from a wafer backside before formation of a final passivationlayer. The effective isolated treatment of the wafer backside relativeto the wafer frontside allows a stronger concentration of polishingsolution to be used to remove the undesired material from the waferbackside. Additionally, the abrasive action of the backside scrubbingbrushes reduces the wafer's exposure time to the stronger concentrationof polishing solution because the combined effect of the backsidebrushes and the polishing solution removes the material faster thanwould otherwise be possible using only the polishing solution. Thisfurther reduces the chances of a frontside contamination. While theinventive methodology has been described, in the preferred embodiment,in the context of removing polysilicon from the wafer's backside, it isto be understood that such methodology is not to be so limited orconstrued.

In compliance with the statute, the invention has been described inlanguage more or less specific as to structural and methodical features.It is to be understood, however, that the invention is not limited tothe specific features shown and described, since the means hereindisclosed comprise preferred forms of putting the invention into effect.The invention is, therefore, claimed in any of its forms ormodifications within the proper scope of the appended claimsappropriately interpreted in accordance with the doctrine ofequivalents.

What is claimed is:
 1. A processing method of forming integratedcircuitry comprising: providing a semiconductor wafer having a frontsidefor supporting integrated circuitry and a backside which faces generallyoppositely away from the frontside; at least partially formingintegrated circuitry relative to the semiconductor wafer frontside, theat least partially forming integrated circuitry comprising: forming alayer of insulative material over the semiconductor wafer frontside;etching a capacitor container opening into the layer of insulativematerial; forming a layer of storage node material over thesemiconductor wafer frontside and within the capacitor container openingto less than fill the capacitor container opening, the storage nodematerial forming on the wafer backside while forming on the waferfrontside; forming a filler material over at least the storage nodematerial on the wafer frontside to a degree sufficient to fill theremaining capacitor container opening; planarizing the storage nodematerial and the filler material relative to the layer of insulativematerial; after the planarizing, chemically etching the storage nodematerial to recess it relative to the insulative material and the fillermaterial; after the chemically etching, mechanically scrubbing thestorage node material from the semiconductor wafer backside; aftermechanically scrubbing of the storage node material from the waferbackside, forming a final passivation layer over the semiconductor waferfrontside; and further comprising after the chemically etching, treatingthe wafer backside with a solution having at least about 1% by weighttetramethyl ammonium hydroxide without mechanical scrubbing prior tosaid mechanically scrubbing and while substantially restricting thewafer frontside from such treating.
 2. The method of claim 1 wherein thesolution has less than or equal to about 5% by weight tetramethylammonium hydroxide.
 3. The method of claim 1 wherein the solution hasabout 4% by weight tetramethyl ammonium hydroxide.
 4. The method ofclaim 1 wherein the storage node material comprises polysilicon; thesolution comprises an aqueous solution of less than or equal to about 5%by weight tetramethyl ammonium hydroxide; and the treating of the waferbackside with the solution takes place for a duration of not longer thanabout one minute.
 5. The method of claim 1 wherein the solution hasgreater than 5% by weight tetramethyl ammonium hydroxide.
 6. The methodof claim 1 wherein the solution has about 10% by weight tetramethylammonium hydroxide.
 7. The method of claim 1 wherein the solution hasabout 20% by weight tetramethyl ammonium hydroxide.
 8. The method ofclaim 1 wherein the chemically etching comprises submerging the wafer ina tetramethyl ammonium hydroxide solution.
 9. The method of claim 1comprising removing the filler material prior to forming the finalpassivation layer over the semiconductor material frontside.
 10. Themethod of claim 1 wherein the filler material comprises photoresist. 11.The method of claim 1 wherein the insulative material comprises BPSG.12. The method of claim 1 wherein the insulative material comprises BPSGand the filler material comprises photoresist.